Extreme Ultraviolet Lithography (EUVL) is an advanced technology using a light source of 13.5 nm and is a leading candidate for 22 nm node lithography and beyond. EUV lithography is now in the pilot phase with 0.33-NA tools at chip manufacturing sites. Mass-scale production is expected in near future.
EUV – Technology Updates
- Multiple patterning
- Atomic Layer Deposition (ALD)
- Pellicle
- Dubbed High NA
- High-NA platform, called ‘EXE
EUV Lithography: What is next?
Challenge in EUVL – is the strong absorption of EUV radiation by all materials. EUV resists are structured so that printing occurs in a very thin imaging layer at the surface of the resist. Further, EUV resists materials will have to evolve with the upcoming evolution in light source technology.
Extreme Ultraviolet Lithography (EUVL)
Extreme Ultraviolet Lithography (EUVL)
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