Extreme Ultraviolet Lithography (EUVL) – Report

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Extreme Ultraviolet Lithography (EUVL) is an advanced technology using a light source of 13.5 nm and is a leading candidate for 22 nm node lithography and beyond. EUV lithography is now in the pilot phase with 0.33-NA tools at chip manufacturing sites. Mass-scale production is expected in near future.

EUV – Technology Updates
  • Multiple patterning 
  • Atomic Layer Deposition (ALD) 
  • Pellicle 
  • Dubbed High NA 
  • High-NA platform, called ‘EXE 
EUV Lithography: What is next?​
Challenge in EUVL – is the strong absorption of EUV radiation by all materials. EUV resists are structured so that printing occurs in a very thin imaging layer at the surface of the resist. Further, EUV resists materials will have to evolve with the upcoming evolution in light source technology. 

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